unisonic technologies co., ltd 7nm70 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r205-047.b 7a, 700v n-channel power mosfet ? description the utc 7nm70 is a high voltage super junction mosfet and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. this power mosfet is usually used at high speed switching applications in power supplies, pwm motor controls, high efficient dc to dc converters and bridge circuits. ? features * r ds(on) < 1.2 ? @ v gs = 10v, i d = 3.5a * fast switching capability * avalanche energy specified * improved dv/dt capability, high ruggedness ? symbol ? rdering information ordering number pin assignment lead free halogen free package 1 2 3 packing 7nm70l-ta3-t 7nm70g-ta3-t to-220 g d s tube 7nm70l-tf3-t 7nm70g-tf3-t to-220f g d s tube 7nm70l-tf1-t 7nm70g-tf1-t to-220f1 g d s tube 7nm70l-tf2-t 7NM70G-TF2-T to-220f2 g d s tube 7nm70l-tf3t-t 7nm70g-tf3t-t to-220f3 g d s tube 7nm70l-tm3-t 7nm70g-tm3-t to-251 g d s tube 7nm70l-tms2-t 7nm70g-tms2-t to-251s2 g d s tube 7nm70l-tn3-r 7nm70g-tn3-r to-252 g d s tape reel note: pin assignment: g: gate d: drain s: source
7nm70 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r205-047.b ? marking
7nm70 power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r205-047.b ? absolute maximum ratings (t c = 25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 700 v gate-source voltage v gss 30 v t c = 25c 7.0 a continuous drain current t c = 100c i d 4.7 a drain current pulsed (note 2) i dm 28 a avalanche energy, single pulsed (note 3) e as 40 mj avalanche energy, repetitive, limited by t jmax e ar 14.2 mj peak diode recovery dv/dt (note 4) dv/dt 4.2 v/ns to-220 142 w to-220f/to-220f1 to-220f3 48 w to-220f2 50 w power dissipation (t c = 25c) to-251/to-251s2 to-252 p d 60 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limited by t j 3. l=20mh, i as =2a, v dd =50v, r g =0 ? , starting t j =25c 4. i sd 7.0a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol rating unit to-220/to-220f to-220f1/to-220f2 to-220f3 62.5 junction to ambient to-251/to-251s2 to-252 ja 110 c/w to-220 0.88 to-220f/to-220f1 to-220f3 2.6 to-220f2 2.5 junction to case to-251/to-251s2 to-252 jc 2.08 c/w
7nm70 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r205-047.b ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs = 0v, i d = 250 a 700 v v ds = 700v, v gs = 0v 1 a drain-source leakage current i dss v ds = 560v, t c = 125c 1 a forward v gs = 30v, v ds = 0v 100 na gate-source leakage current reverse i gss v gs = -30v, v ds = 0v -100 na breakdown voltage temperature coefficient bv dss / t j i d = 250ma referenced to 25c 0.67 v/c on characteristics gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v drain-source on-state resistance r ds(on) v gs = 10v, i d = 3.5a 1.2 ? dynamic characteristics input capacitance c iss 340 pf output capacitance c oss 120 pf reverse transfer capacitance c rss v ds = 25v, v gs = 0v, f = 1mhz 6.5 pf switching characteristics total gate charge q g 19 nc gate-source charge q gs 5 nc gate-drain charge q dd v ds = 50v, v gs = 10v i d = 1.3a, , i g =100 a (note 1, 2) 5.2 nc turn-on delay time t d(on) 50 ns turn-on rise time t r 70 ns turn-off delay time t d(off) 140 ns turn-off fall time t f v dd = 30v, v gs = 10v i d = 0.5a, r g = 25 ? (note 1, 2) 65 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0v, i s =7.0a 1.4 v maximum continuous drain-source diode forward current i s 7.0 a maximum pulsed drain-source diode forward current i sm 28 a reverse recovery time t rr 317 ns reverse recovery charge (note 1) q rr v gs = 0 v, i s = 7.0a, di f /dt = 100 a/ s 3.03 c notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7nm70 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r205-047.b ? test circuits and waveforms peak diode recovery dv/dt test circuit p. w. period d= v gs (driver) i sd (d.u.t.) i fm , body diode forward current di/dt i rm body diode reverse current body diode recovery dv/dt body diode forward voltage drop v dd 10v v ds (d.u.t.) v gs = p.w. period peak diode recovery dv/dt waveforms
7nm70 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r205-047.b ? test circuits and waveforms (cont.) switching test circuit switching waveforms gate charge test circuit gate charge waveform d.u.t. r d 10v v ds l v dd t p v dd t p time bv dss i as i d(t) v ds(t) unclamped inductive switching test circuit unclamped inductive switching waveforms
7nm70 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r205-047.b ? typical characteristics utc assumes no responsib ility for equipment failures that result from using pr oducts at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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